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| VUO 55 Three Phase Rectifier Bridge IdAVM = 58 A VRRM = 1200-1800 V VRSM V 1200 1400 1600 1800 VRRM V 1200 1400 1600 1800 Type ~ ~ ~ + + - VUO 55-12NO7 VUO 55-14NO7 VUO 55-16NO7 VUO 55-18NO7* - ~ * delivery time on request ~ ~ Symbol IdAVM IFSM Test Conditions TC = 85C, module TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 58 750 820 670 740 2800 2820 2250 2300 -40...+150 150 -40...+150 A A A A A A2s A2s A2s A2s C C C V~ V~ Nm lb.in. Nm lb.in. g Features Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 72873 q q q q q q I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors q q q q 2500 3000 5 15 % 44 15 % 3 15 % 26 15 % 260 Mounting torque (M5) Terminal connection torque (M5) Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling q q q Dimensions in mm (1 mm = 0.0394") Weight typ. Symbol IR VF VT0 rT RthJC RthJH Test Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25C TVJ = TVJM TVJ = 25C Characteristic Values 0.3 10.0 1.6 0.85 8 2.7 0.45 3.06 0.51 mA mA V V mW K/W K/W K/W K/W For power-loss calculations only per diode; DC current per module per diode; DC current per module Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 VUO 55 I2t Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 I2t versus time (1-10 ms) per diode Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at case temperature Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.036 0.149 0.615 1.9 ti (s) 0.013 0.034 1.35 23.0 Constants for ZthJK calculation: i 1 2 3 4 5 Fig. 6 Transient thermal impedance per diode (c) 2000 IXYS All rights reserved Rthi (K/W) 0.036 0.149 0.615 1.9 0.36 ti (s) 0.013 0.034 1.35 23.0 52.0 2-2 |
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